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BSH102 - N-channel enhancement mode MOS transistor

General Description

DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package.

Fig.1 Simplified outline and symbol.

Key Features

  • Very low threshold.
  • High-speed switching.
  • No secondary breakdown.
  • Direct interface to C-MOS, TTL etc.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH102 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Dec 08 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES • Very low threshold • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. APPLICATIONS • Power management • DC to DC converters • Battery powered applications • ‘Glue-logic’; interface between logic blocks and/or periphery • General purpose switch. 1 2 MAM273 BSH102 PINNING - SOT23 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION handbook, halfpage 3 d g s DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package.