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BSH102 Datasheet N-channel Enhancement Mode Mos Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH102 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Dec 08.

General Description

handbook, halfpage 3 d g s DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package.

Top view Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation VDS = VGS ;

Key Features

  • Very low threshold.
  • High-speed switching.
  • No secondary breakdown.
  • Direct interface to C-MOS, TTL etc.

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