Datasheet Summary
6 February 2013
SO T2 3
60 V, single N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
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- Very fast switching Trench MOSFET technology ESD protection Low threshold voltage AEC-Q101 qualified
3. Applications
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Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V;...
