Description
PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature
CGY2010G; CGY2011G
GENERAL DESCRIPTION The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power amplifiers specifically designed to oper
Features
- Power Amplifier (PA) overall efficiency 45%.
- 35.5 dB gain.
- 0 dBm input power.
- Gain control range >55 dB.
- Integrated power sensor driver.
- Low output noise floor of PA <.
- 129 dBm/Hz in GSM RX band.
- Wide operating temperature range.
- 20 to +85 °C.
- LQFP 48 pin package.
- Compatible with power ramping controller PCA5075.
- Compatible with GSM RF transceiver SA1620.
CGY2010G Datasheet
