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CGY2011G - GSM 4W power amplifiers

General Description

PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature CGY2010G; CGY2011G GENERAL DESCRIPTION The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power amplifiers specifically designed to oper

Key Features

  • Power Amplifier (PA) overall efficiency 45%.
  • 35.5 dB gain.
  • 0 dBm input power.
  • Gain control range >55 dB.
  • Integrated power sensor driver.
  • Low output noise floor of PA <.
  • 129 dBm/Hz in GSM RX band.
  • Wide operating temperature range.
  • 20 to +85 °C.
  • LQFP 48 pin package.
  • Compatible with power ramping controller PCA5075.
  • Compatible with GSM RF transceiver SA1620.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers FEATURES • Power Amplifier (PA) overall efficiency 45% • 35.5 dB gain • 0 dBm input power • Gain control range >55 dB • Integrated power sensor driver • Low output noise floor of PA < −129 dBm/Hz in GSM RX band • Wide operating temperature range −20 to +85 °C • LQFP 48 pin package • Compatible with power ramping controller PCA5075 • Compatible with GSM RF transceiver SA1620. APPLICATIONS • 880 to 915 MHz hand-held transceivers for E-GSM applications • 900 MHz TDMA systems. QUICK REFERENCE DATA SYMBOL VDD IDD Pout(max) Tamb Note 1.