CGY2011G Description
PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature CGY2010G; CGY2011G GENERAL DESCRIPTION The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power amplifiers specifically designed to operate at 4.8 V battery supply. These ICs also include a power sensor driver so that no directional coupler is required in...
CGY2011G Key Features
- Power Amplifier (PA) overall efficiency 45%
- 35.5 dB gain
- 0 dBm input power
- Gain control range >55 dB
- Integrated power sensor driver
- Low output noise floor of PA < -129 dBm/Hz in GSM RX band
- Wide operating temperature range -20 to +85 °C
- LQFP 48 pin package
- patible with power ramping controller PCA5075
- patible with GSM RF transceiver SA1620
CGY2011G Applications
- 880 to 915 MHz hand-held transceivers for E-GSM applications