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CGY2014ATW Datasheet

Manufacturer: NXP Semiconductors
CGY2014ATW datasheet preview

Datasheet Details

Part number CGY2014ATW
Datasheet CGY2014ATW_PhilipsSemiconductors.pdf
File Size 73.97 KB
Manufacturer NXP Semiconductors
Description GSM/DCS/PCS power amplifier
CGY2014ATW page 2 CGY2014ATW page 3

CGY2014ATW Overview

CGY2014ATW The CGY2014ATW is a dual-band GSM/DCS/PCS GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier. The circuit is specifically designed to operate at 3.6 V battery supply voltage. The power amplifier requires only a 30 dB harmonic low-pass filter to ply with the transmit spurious specification.

CGY2014ATW Key Features

  • Operates at 3.6 V battery supply voltage
  • Power Amplifier (PA) output power: 35 dBm in GSM band and 32.5 dBm in DCS/PCS band
  • Input power: 5 dBm in GSM band and DCS/PCS band
  • Wide operating temperature range from Tamb = -20 to +85 °C
  • HTSSOP20 exposed die pad package
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CGY2014ATW Distributor

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