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CGY2013G - GSM 4W power amplifier

General Description

plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature

20 MIN.

TYP.

GENERAL DESCRIPTION CGY2013G The CGY20

Key Features

  • Power Amplifier (PA) overall efficiency 52%.
  • 35.5 dB gain.
  • 0 dBm input power.
  • Gain control range >55 dB.
  • Low output noise floor of PA <.
  • 130 dBm/Hz in GSM RX band.
  • Wide operating temperature range.
  • 20 to +85 °C.
  • LQFP 48 pin package.
  • Compatible with power ramping controller PCF5077.
  • Compatible with GSM RF transceiver SA1620.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23 Philips Semiconductors Preliminary specification GSM 4 W power amplifier FEATURES • Power Amplifier (PA) overall efficiency 52% • 35.5 dB gain • 0 dBm input power • Gain control range >55 dB • Low output noise floor of PA < −130 dBm/Hz in GSM RX band • Wide operating temperature range −20 to +85 °C • LQFP 48 pin package • Compatible with power ramping controller PCF5077 • Compatible with GSM RF transceiver SA1620. APPLICATIONS • 880 to 915 MHz hand-held transceivers for E-GSM applications • 900 MHz Time Division Multiple Access (TDMA) systems. QUICK REFERENCE DATA SYMBOL VDD IDD Po(max) Tamb Note 1.