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CGY2013G Datasheet

Manufacturer: NXP Semiconductors
CGY2013G datasheet preview

Datasheet Details

Part number CGY2013G
Datasheet CGY2013G_PhilipsSemiconductors.pdf
File Size 86.19 KB
Manufacturer NXP Semiconductors
Description GSM 4W power amplifier
CGY2013G page 2 CGY2013G page 3

CGY2013G Overview

plastic low profile quad flat package; body 7 × 7 × 1.4 mm PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature − − − −20 MIN. 3.6 2.4 35.5 − GENERAL DESCRIPTION CGY2013G The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.

CGY2013G Key Features

  • Power Amplifier (PA) overall efficiency 52%
  • 35.5 dB gain
  • 0 dBm input power
  • Gain control range >55 dB
  • Low output noise floor of PA < -130 dBm/Hz in GSM RX band
  • Wide operating temperature range -20 to +85 °C
  • LQFP 48 pin package
  • patible with power ramping controller PCF5077
  • patible with GSM RF transceiver SA1620

CGY2013G Applications

  • 880 to 915 MHz hand-held transceivers for E-GSM applications
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CGY2013G Distributor

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