NXP Semiconductors CGY2013G
The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. The PA requires only a 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. It can be switched off and its power controlled by monitoring the actual drain voltage applied to the amplifier stages.| Part No. | CGY2013G |
|---|---|
| Datasheet | CGY2013G Download |
| Manufacturer |  NXP Semiconductors |
| Description | GSM 4W power amplifier |
| Buy | Stock & Price |
FEATURES
● Power Amplifier (PA) overall efficiency 52%● 35.5 dB gain
● 0 dBm input power
● Gain control range >55 dB
● Low output noise floor of PA < −130 dBm/Hz in GSM RX band
● Wide operating temperature range −20 to +85 °C
● LQFP 48 pin package
● Compatible with power ramping controller PCF5077
● Compatible with GSM RF transceiver SA1620.
APPLICATIONS
● 880 to 915 MHz hand-held transceivers for E-GSM applications● 900 MHz Time Division Multiple Access (TDMA) systems. QUICK REFERENCE DATA SYMBOL VDD IDD Po(max) Tamb Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION TYPE NUMBER CGY2013G PACKAGE NAME LQFP48
DESCRIPTION
plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature − − − −20 MIN. TYP. 3.6 2.4 35.5 −GENERAL DESCRIPTION
CGY2013G MAX. − − − +85 UNIT V A dBm οC VERSION SOT313-2 1998 Jan 23 2 Phili...
