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CGY2030M Datasheet

Manufacturer: NXP Semiconductors
CGY2030M datasheet preview

Datasheet Details

Part number CGY2030M
Datasheet CGY2030M_PhilipsSemiconductors.pdf
File Size 93.68 KB
Manufacturer NXP Semiconductors
Description DECT 500 mW power amplifier
CGY2030M page 2 CGY2030M page 3

CGY2030M Overview

plastic shrink small outline package; body width 4.4 mm PARAMETER (1) positive supply voltage positive peak supply current output power operating ambient temperature − − − −30 MIN. 3.2 400 27 − − − − GENERAL DESCRIPTION CGY2030M The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.

CGY2030M Key Features

  • Power Amplifier (PA) overall efficiency 40%
  • 27 dB gain
  • 0 dBm input power
  • Operation possible without negative supply
  • Wide operating temperature range -30 to +85 °C
  • SSOP16 package

CGY2030M Applications

  • 1.88 to 1.9 GHz transceivers for DECT applications
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CGY2030M Distributor

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