NXP Semiconductors CGY2032TS
The CGY2032TS is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate from 3.6 V battery supply. For conditions, see Chapters “AC characteristics” and “DC characteristics”. FUNCTIONAL DESCRIPTION Amplifier The CGY2032TS is a 3-stage GaAs power amplifier capable of delivering 500 mW (typ.) at 1.9 GHz into a 50 Ω load.| Part No. | CGY2032TS |
|---|---|
| Datasheet | CGY2032TS Download |
| Manufacturer |  NXP Semiconductors |
| Description | DECT 500 mW power amplifier |
| Buy | Stock & Price |
FEATURES
● Power Amplifier (PA) overall efficiency 55%● 27.5 dBm saturated output power at 3.2 V
● 0 dBm input power
● 40 dB linear gain
● Operation without negative supply
● Wide operating temperature range −30 to +85 °C
● SSOP16 package.
APPLICATIONS
CGY2032TS● 1.88 to 1.9 GHz transceivers for DECT applications
● 2 GHz transceivers [Personal Handy phone System (PHS), Digital Cellular System (DCS) and Personal Communication Services (PCS)].
GENERAL DESCRIPTION
No negative supply voltage is required for operation. QUICK REFERENCE DATA SYMBOL VDD IDD Po Tamb Note 1. ORDERING INFORMATION TYPE NUMBER CGY2032TS PACKAGE NAME SSOP16DESCRIPTION
plastic shrink small outline package; 16 leads; body width 4.4 mm VERSION SOT369-1 positive supply voltage positive peak supply current output power ambient temperature PARAMETER(1) MIN. − − − −30 TYP. 3.2 350 27.5 − MAX. − − − +85 UNIT V mA dBm °C BLOCK DIAGRAM handbook, halfpage VDD1 8 VDD2 VDD3 5 1 CGY2032TS RFI 11 16 15 10 GND1 6, 7 2, 3, 4 12, 13, 14 MGK735 RFO OPM GND2 GND3 Fig.1 Block diagram.
