Datasheet Summary
29 October 2013
SO T6 6
30 V, 200 mA dual N-channel Trench MOSFET
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
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Very fast switching Trench MOSFET technology ESD protection Low threshold voltage
3. Applications
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Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA;...
