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PHB2N50 - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance.

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Note: The manufacturer provides a single datasheet file (PHB2N50_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PHB2N50
Manufacturer NXP Semiconductors
File Size 59.96 KB
Description PowerMOS transistor
Datasheet download datasheet PHB2N50 Datasheet
Additional preview pages of the PHB2N50 datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistor PHB2N50 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
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