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PHB2N50E

PHB2N50E is PowerMOS transistors Avalanche energy rated manufactured by NXP Semiconductors.
PHB2N50E datasheet preview

PHB2N50E Datasheet

Part number PHB2N50E
Download PHB2N50E Datasheet (PDF)
File Size 75.27 KB
Manufacturer NXP Semiconductors
Description PowerMOS transistors Avalanche energy rated
PHB2N50E page 2 PHB2N50E page 3

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PHB2N50E Distributor

PHB2N50E Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. converters, motor control circuits and general purpose switching applications.

PHB2N50E Key Features

  • Repetitive Avalanche Rated
  • Fast switching
  • Stable off-state characteristics
  • High thermal cycling performance
  • Low thermal resistance

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