PHB2N50E Datasheet | NXP Semiconductors

FEATURES - Repetitive Avalanche Rated - Fast switching - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance PHP2N50E, PHB2N50E, PHD2N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 2 A RDS(ON) ≤ 5 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB2N50E is supplied in the SOT404 surface mounting package. The PHD2N50E is supplied in the SOT428 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION gate drain1 source SOT78 (TO220AB) tab SOT404 tab SOT428 tab 2 drain 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 500 500 ± 30 2 1.3 8 50 150 UNIT V V V A A A W ˚C 1 It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages. December 1998 1 Rev 1.200 Philips Semiconductors Product specification Power MOS transistors Avalanche energy rated AVALANCHE ENERGY LIMITING VALUES PHP2N50E, PHB2N50E, PHD2N50E Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy CONDITIONS MIN. MAX. 82 UNIT m J Unclamped inductive load, IAS = 1.26 A; tp = 0.2 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17 Repetitive avalanche energy2 IAR = 2 A; tp = 2.5 µs; Tj prior to...