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PHB30NQ15T - N-channel TrenchMOS transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Features

  • ’Trench’ technology.
  • Very low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL d QUICK.

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Datasheet Details

Part number PHB30NQ15T
Manufacturer NXP
File Size 98.03 KB
Description N-channel TrenchMOS transistor
Datasheet download datasheet PHB30NQ15T Datasheet
Additional preview pages of the PHB30NQ15T datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP30NQ15T, PHB30NQ15T FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 29 A g RDS(ON) ≤ 63 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP30NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB30NQ15T is supplied in the SOT404 (D2PAK) surface mounting package.
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