PHB34NQ10T Datasheet PDF - NXP N-channel TrenchMOS transistor Specs

PHB34NQ10T - N-channel TrenchMOS transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHP34NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.

Features

’Trench’ technology.
Low on-state resistance.
Fast switching.
Low thermal resistance SYMBOL VDSS = 100 V ID = 35 A g RDS(ON) ≤ 40 mΩ s.

Datasheet Details

Part number	PHB34NQ10T
Manufacturer	NXP
File Size	111.33 KB
Description	N-channel TrenchMOS transistor
Datasheet	PHB34NQ10T Datasheet
Additional preview pages of the PHB34NQ10T datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP34NQ10T, PHB34NQ10T PHD34NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 35 A g RDS(ON) ≤ 40 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP34NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB34NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD34NQ10T is supplied in the SOT428 (DPAK) surface mounting package.

Published: Mar 22, 2005 |