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PHB37N06LT - TrenchMOS transistor Logic level FET

Datasheet Summary

Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Features

  • ’Trench’ technology.
  • Very low on-state resistance.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance PHP37N06LT, PHB37N06LT, PHD37N06LT SYMBOL d QUICK.

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Datasheet preview – PHB37N06LT

Datasheet Details

Part number PHB37N06LT
Manufacturer NXP
File Size 79.11 KB
Description TrenchMOS transistor Logic level FET
Datasheet download datasheet PHB37N06LT Datasheet
Additional preview pages of the PHB37N06LT datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP37N06LT, PHB37N06LT, PHD37N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 37 A g s RDS(ON) ≤ 35 mΩ (VGS = 5 V) RDS(ON) ≤ 32 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP37N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
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