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PHB3N40E

PHB3N40E is PowerMOS transistors Avalanche energy rated manufactured by NXP Semiconductors.
PHB3N40E datasheet preview

PHB3N40E Datasheet

Part number PHB3N40E
Download PHB3N40E Datasheet (PDF)
File Size 94.23 KB
Manufacturer NXP Semiconductors
Description PowerMOS transistors Avalanche energy rated
PHB3N40E page 2 PHB3N40E page 3

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PHB3N40E Distributor

PHB3N40E Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. converters, motor control circuits and general purpose switching applications.

PHB3N40E Key Features

  • Repetitive Avalanche Rated
  • Fast switching
  • Stable off-state characteristics
  • High thermal cycling performance
  • Low thermal resistance

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