PHB3N40E Datasheet PDF - NXP PowerMOS transistors Avalanche energy rated Specs

PHB3N40E - PowerMOS transistors Avalanche energy rated

Datasheet Summary

Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V.

and computer monitor power supplies, d.c.

to d.c.

Features

Repetitive Avalanche Rated.
Fast switching.
Stable off-state characteristics.
High thermal cycling performance.
Low thermal resistance PHP3N40E, PHB3N40E, PHD3N40E SYMBOL d QUICK.

Datasheet Details

Part number	PHB3N40E
Manufacturer	NXP
File Size	94.23 KB
Description	PowerMOS transistors Avalanche energy rated
Datasheet	PHB3N40E Datasheet
Additional preview pages of the PHB3N40E datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP3N40E, PHB3N40E, PHD3N40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID = 2.5 A RDS(ON) ≤ 3.5 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N40E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB3N40E is supplied in the SOT404 surface mounting package.

Published: Mar 22, 2005 |