• Part: PHB3N50E
  • Description: PowerMOS transistors Avalanche energy rated
  • Category: Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 78.35 KB
Download PHB3N50E Datasheet PDF
NXP Semiconductors
PHB3N50E
PHB3N50E is PowerMOS transistors Avalanche energy rated manufactured by NXP Semiconductors.
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated Features - Repetitive Avalanche Rated - Fast switching - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance PHP3N50E, PHB3N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 3.4 A RDS(ON) ≤ 3 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB3N50E...