PHB3N50E Datasheet PDF - NXP PowerMOS transistors Avalanche energy rated Specs

PHB3N50E - PowerMOS transistors Avalanche energy rated

Datasheet Summary

Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V.

and computer monitor power supplies, d.c.

to d.c.

Features

Repetitive Avalanche Rated.
Fast switching.
Stable off-state characteristics.
High thermal cycling performance.
Low thermal resistance PHP3N50E, PHB3N50E SYMBOL d QUICK.

Datasheet Details

Part number	PHB3N50E
Manufacturer	NXP
File Size	78.35 KB
Description	PowerMOS transistors Avalanche energy rated
Datasheet	PHB3N50E Datasheet
Additional preview pages of the PHB3N50E datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP3N50E, PHB3N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 3.4 A RDS(ON) ≤ 3 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB3N50E is supplied in the SOT404 surface mounting package.

Published: Mar 22, 2005 |