Datasheet Summary
PHB/PHD66NQ03LT
N-channel TrenchMOS™ logic level FET
Rev. 06
- 2 August 2004
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features s Logic level threshold s Low on-state resistance.
1.3 Applications s DC-to-DC converters s General purpose switching.
1.4 Quick reference data s VDS ≤ 25 V s RDSon ≤ 10.5 mΩ s ID ≤ 66 A s Qgd = 3.6 nC (typ).
2. Pinning information
Table 1: Discrete pinning Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d)
Simplified outline
[1] mb mb
2 13
SOT404 (D2-PAK)
2 13
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