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PHD69N03LT - N-channel TrenchMOS transistor Logic level FET

General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.

High frequency computer motherboard d.c.

to d.c.

High current switching The PHP69N03LT is supplied in the SOT78 (TO220AB) conventional lea

Key Features

  • ’Trench’ technology.
  • Very low on-state resistance.
  • Fast switching.
  • Low thermal resistance.
  • Logic level compatible PHP69N03LT, PHB69N03LT PHD69N03LT QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible PHP69N03LT, PHB69N03LT PHD69N03LT QUICK REFERENCE DATA d SYMBOL VDSS = 25 V ID = 69 A RDS(ON) ≤ 12 mΩ (VGS = 10 V) RDS(ON) ≤ 14 mΩ (VGS = 5 V) g s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• High frequency computer motherboard d.c. to d.c. converters • High current switching The PHP69N03LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB69N03LT is supplied in the SOT404 (D2PAK) surface mounting package.