PMWD26UN Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
- Part: PMWD26UN
- Manufacturer: NXP Semiconductors (official site)
- Size: 115.95 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| PMWD20XN | Dual N-channel uTrenchMOS extremely low level FET |
| PMWD22XN | Dual N-channel uTrenchMOS extremely low level FET |
| PMWD15UN | Dual N-channel uTrenchMOS ultra low level FET |
| PMWD16UN | Dual N-channel uTrenchMOS ultra low level FET |
| PMWD18UN | Dual N-channel uTrenchMOS ultra low level FET |