NT5DS64M8CG - 512Mb DDR SDRAM

This page provides the datasheet information for the NT5DS64M8CG, a member of the NT5DS32M16CG 512Mb DDR SDRAM family.

Product Overview

Nanya Techology

Part number	NT5DS64M8CG
Manufacturer	Nanya Techology
File Size	2.15 MB
Description	512Mb DDR SDRAM
Datasheet	NT5DS64M8CG Datasheet
Additional preview pages of the NT5DS64M8CG datasheet.

Die C of 512Mb SDRAM devices based using DDR interface.

They are all based on Nanya’s 90 nm design process.

The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits.

DDR 512M bit, Die C, based on 90nm design rules.
Double data rate architecture: two data transfers per clock cycle.
Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver.
DQS is edge-aligned with data for reads and is centeraligned with data for writes.
Differential clock inputs (CK and CK).
Four internal banks for concurrent operation.
Data mask (DM) for write data.

NT5DS64M8DS - 512Mb DDR SDRAM (Elixir)
NT5DS64M4AT - (NT5DSxxMxAx) 256Mb DDR333/300 SDRAM (Nanya)
NT5DS64M4AW - (NT5DSxxMxAx) 256Mb DDR333/300 SDRAM (Nanya)
NT5DS16M16ES - Commercial and Industrial Consumer DDR 256Mb SDRAM (Nanya)
NT5DS16M8AW - (NT5DSxxMxAx) 128Mb DDR333/300 SDRAM (Nanya Technology)
NT5DS32M4AW - (NT5DSxxMxAx) 128Mb DDR333/300 SDRAM (Nanya Technology)
NT5DS32M8AT - 256Mb DDR333/300 SDRAM (Nanya)
NT5DS32M8AW - (NT5DSxxMxAx) 256Mb DDR333/300 SDRAM (Nanya)
NT5DS32M8ES - Commercial and Industrial Consumer DDR 256Mb SDRAM (Nanya)
NT5DS4M32EG - 1M X 32 Bits X 4 Banks Double Data Rate Synchronous RAM (NanoAmp Solutions)

Other Datasheets by Nanya Techology

Published: Jul 6, 2016 |