NT5CB128M16BP - 2Gb DDR3 SDRAM B-Die

This page provides the datasheet information for the NT5CB128M16BP, a member of the NT5CB512M4BN 2Gb DDR3 SDRAM B-Die family.

Datasheet Summary

Description

The 2Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 2,147,483,648 bits.

It is internally configured as an octal-bank DRAM.

The 2Gb chip is organized as 64Mbit x 4 I/O x 8 bank, 32Mbit x 8 I/O x 8 bank or 16Mbit x 16 I/O x 8 bank device.

Features

and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA packages. 1 REV 1.1 08 / 2010 2Gb DDR3 SDRAM B-Die NT5CB512M4BN / NT5CB2.

Nanya

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Datasheet Details

Part number	NT5CB128M16BP
Manufacturer	Nanya
File Size	2.38 MB
Description	2Gb DDR3 SDRAM B-Die
Datasheet	NT5CB128M16BP Datasheet
Additional preview pages of the NT5CB128M16BP datasheet.

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Full PDF Text Transcription

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2Gb DDR3 SDRAM B-Die NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.

Published: Oct 17, 2014 |