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NT5CB128M8AN - 1Gb DDR3 SDRAM A-Die

Download the NT5CB128M8AN datasheet PDF. This datasheet also covers the NT5CB256M4AN variant, as both devices belong to the same 1gb ddr3 sdram a-die family and are provided as variant models within a single manufacturer datasheet.

General Description

The 1Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 1,073,741,824 bits.

It is internally configured as an octal-bank DRAM.

The 1Gb chip is organized as 32Mbit x 4 I/O x 8, 16Mbit x 8 I/O x 8 bank or 8Mbit x 16 I/O x 8 bank device.

Key Features

  • and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.75V power supply and are available in BGA packages. REV 1.2 01 / 2009 1 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NT5CB256M4AN-Nanya.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NT5CB128M8AN
Manufacturer Nanya
File Size 2.27 MB
Description 1Gb DDR3 SDRAM A-Die
Datasheet download datasheet NT5CB128M8AN Datasheet

Full PDF Text Transcription for NT5CB128M8AN (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NT5CB128M8AN. For precise diagrams, and layout, please refer to the original PDF.

1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  1.5V ± 0.075V (JEDEC Standard Power Supply)  8 Internal memory banks (BA0- BA2)  Differential ...

View more extracted text
ard Power Supply)  8 Internal memory banks (BA0- BA2)  Differential clock input (CK, )  Programmable  Latency: 5, 6, 7, 8, 9  Programmable Additive Latency: 0, CL-1, CL-2  Programmable Sequential / Interleave Burst Type  Programmable Burst Length: 4, 8  8 bit prefetch architecture  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)  Auto Self-Refresh  Self-Refresh Temperature  Partial Array Self-Refresh  RoHS Compliance  Packages: 78-Ball BGA for x4 & x8 components 96-Ball BGA for x16 components Description The 1Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-

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