NT5CB128M8AN Datasheet | Nanya

Feature - 1.5V ± 0.075V (JEDEC Standard Power Supply) - 8 Internal memory banks (BA0- BA2) - Differential clock input (CK, ) - Programmable  Latency: 5, 6, 7, 8, 9 - Programmable Additive Latency: 0, CL-1, CL-2 - Programmable Sequential / Interleave Burst Type - Programmable Burst Length: 4, 8 - 8 bit prefetch architecture - Output Driver Impedance Control - Write Leveling - OCD Calibration - Dynamic ODT (Rtt_Nom & Rtt_WR) - Auto Self-Refresh - Self-Refresh Temperature - Partial Array Self-Refresh - Ro HS pliance - Packages: 78-Ball BGA for x4 & x8 ponents 96-Ball BGA for x16 ponents Description The 1Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 1,073,741,824 bits. It is internally configured as an octal-bank DRAM. The 1Gb chip is organized as 32Mbit x 4 I/O x 8, 16Mbit x 8 I/O x 8 bank or 8Mbit x 16 I/O x 8 bank device. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. The chip is designed to ply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.75V power supply and are available in BGA packages. REV 1.2 01 / 2009 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Pin Configuration - 78 balls BGA Package (x4) < TOP View> See the balls through the package 1 VSS VSS VDDQ VSSQ VREFDQ NC ODT NC VSS VDD VSS VDD VSS 2 VDD VSSQ DQ2 NC VDDQ VSS VDD  BA0 A3 A5 A7  3 NC DQ0 DQS  NC    BA2 A0 A2 A9 A13 x4 7 A NC B DM C DQ1 D VDD E NC F CK G  H A10/AP J NC K A12/ L A1 M A11 N NC 8 VSS VSSQ DQ3 VSS NC VSS VDD ZQ VERFCA BA1 A4 A6...