NT5CB128M8DN - 1Gb DDR3 SDRAM

Product Overview

Nanya

Part number	NT5CB128M8DN
Manufacturer	Nanya
File Size	2.62 MB
Description	1Gb DDR3 SDRAM
Datasheet	NT5CB128M8DN Datasheet
Additional preview pages of the NT5CB128M8DN datasheet.

The 1Gb Double-Data-Rate-3 (DDR3/L) B-die DRAMs is double data rate architecture to achieve high-speed operation.

It is internally configured as an eight bank DRAM.

The 1Gb chip is organized as 16Mbit x 8 I/Os x 8 banks or 8Mbit x 16 I/Os x 8 bank devices.

and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067/+0.1V power supply and are available in BGA packages. DCC Version 1.1 01 / 2014 3 © NANYA.

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Published: Jun 17, 2016 |