NT5CB128M8DN Datasheet | Nanya

Feature - 1.5V ± 0.075V & 1.35V -0.067/+0.1V (JEDEC Standard Power Supply) - VDD= VDDQ= 1.35V (1.283~1.45V ) Backward patible to VDD= VDDQ= 1.5V ±0.075V Supports DDR3L devices to be backward patible in 1.5V applications - The timing specification of high speed bin is backward patible with low speed bin - 8 Internal memory banks (BA0- BA2) - Differential clock input (CK, ) - Programmable Latency: 5, 6, 7, 8, 9, 10, 11, 12, 13, (14) - POSTED CAS ADDITIVE Programmable Additive Latency: 0, CL-1, CL-2 - Programmable Sequential / Interleave Burst Type - Programmable Burst Length: 4, 8 - 8n-bit prefetch architecture - Output Driver Impedance Control - Differential bidirectional data strobe - Write Leveling - OCD Calibration - Dynamic ODT (Rtt_Nom & Rtt_WR) - Auto Self-Refresh - Self-Refresh Temperature - Ro HS pliance - Lead-Free and Halogen-Free - Packages: 78-Ball BGA for x8 ponents 96-Ball BGA for x16 ponents - Operation Temperture merical grade (0℃≦TC≦95℃) - BE, CF, DH, EJ, FK Industial grade (-40℃≦TC≦95℃) - CFI, DHI DCC Version 1.1 01/ 2014 © NANYA TECHNOLOGY CORP. All rights reserved NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. 1Gb DDR3 SDRAM NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP Table 1: CAS Latency Frequency -BE- -CF/CFI- Speed Bins DDR3/L-1066 DDR3/L-1333...