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NT5CB128M16HP - 2Gb DDR3 SDRAM H-Die

General Description

The 2Gb Double-Data-Rate-3 (DDR3(L)) H-die DRAM is double data rate architecture to achieve high-speed operation.

It is internally configured as an eight bank DRAMs.

The 2Gb chip is organized as 16Mbit x 16 I/Os x 8 bank devices.

Key Features

  • and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA packages. 3 REV 1.4 02 /2013 © NANYA.

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Datasheet Details

Part number NT5CB128M16HP
Manufacturer Nanya
File Size 2.90 MB
Description 2Gb DDR3 SDRAM H-Die
Datasheet download datasheet NT5CB128M16HP Datasheet

Full PDF Text Transcription for NT5CB128M16HP (Reference)

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2Gb DDR3 SDRAM H-Die NT5CB128M16HP NT5CC128M16HP Feature  1.35V -0.067V/+0.1V & 1.5V ± 0....

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