NT5CB128M16HP
NT5CB128M16HP is 2Gb DDR3 SDRAM H-Die manufactured by Nanya.
Feature
- 1.35V -0.067V/+0.1V & 1.5V ± 0.075V (JEDEC Standard Power Supply)
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- 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5, 6, 7, 8, 9, 10, 11, 12, 13 and 14
- - WRITE Latency (CWL): 5,6,7,8,9 and 10 POSTED CAS ADDITIVE Programmable Additive Latency (AL): 0, CL-1, CL-2 clock
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- - Programmable Sequential / Interleave Burst Type Programmable Burst Length: 4, 8 8n-bit prefetch architecture Output Driver Impedance Control
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Through ZQ pin (RZQ:240 ohm±1%) Differential bidirectional data strobe Internal(self) calibration:Internal self calibration OCD Calibration Dynamic ODT (Rtt_Nom & Rtt_WR) Auto Self-Refresh Self-Refresh Temperature Ro HS pliance and Halogen free Packages: 96-Balls BGA for x16 ponents Operating temperature merical grade (0℃≦TC≦95℃) For -BE,-CG,-DI, -EK, -FL Industrial grade (-40℃≦TC≦95℃) For -CGI,-DII
REV 1.4
02 /2013
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Free Datasheet http://.0PDF.
2Gb DDR3 SDRAM H-Die
NT5CB128M16HP NT5CC128M16HP
Table 1: CAS Latency Frequency
-BE- Speed Bins DDR3(L)-1066-CL7 DDR3(L)-1333-CL9 DDR3(L)-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Tck Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. (Avg.) Clock 300 Frequency t RCD t RP t RC t RAS t CK(Avg.)@CL5 t CK(Avg.)@CL6 t CK(Avg.)@CL7 t CK(Avg.)@CL8 t CK(Avg.)@CL9 t CK(Avg.)@CL10 t CK(Avg.)@CL11 t CK(Avg.)@CL12 t CK(Avg.)@CL13 t CK(Avg.)@CL14 1.07 1.25 1.07 0.935 1.25 1.07 13.125 13.125 50.625 37.5 3.0 2.5 1.875 1.875 70K 3.3 3.3 2.5 2.5 13.125 13.125 49.5 36 3.0 2.5 1.875 1.875 1.5 1.5 70K 3.3 3.3 2.5 2.5 1.875 1.875 13.125 13.125 48.75 35 3.0 2.5 1.875 1.875 1.5 1.5 1.25 70K 3.3 3.3 2.5 2.5 1.875 1.875 1.5 1.5 1.875 1.875 2.5 13.91 13.91 47.91 34 2.5 70K 3.3 2.5 1.875 1.875 1.5 1.5 1.25 3.3 2.5 2.5 1.875 1.875 1.5 ns ns ns ns ns ns ns ns ns ns ns ns 533 300 667 300 800 300 933 300 1066 MHz...
