2SA1416 - Bipolar Transistor

onsemi

Key Features

Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Speciﬁcations ( ) : 2SA1416 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperat.

2SA1416 bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2SA1416
Manufacturer	onsemi
File Size	235.01 KB
Description	Bipolar Transistor
Datasheet	2SA1416 Datasheet

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Ordering number : EN2005C 2SA1416/2SC3646 Bipolar Transistor (–)100V, (–)1A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Speciﬁcations ( ) : 2SA1416 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings (--)120 (--)100 (--)6 (--)1 (--)2 500 1.