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2SC5658RM3T5G - NPN Silicon General Purpose Amplifier Transistor

Download the 2SC5658RM3T5G datasheet PDF. This datasheet also covers the 2SC5658M3T5G variant, as both devices belong to the same npn silicon general purpose amplifier transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Reduces Board Space.
  • High hFE, 210.
  • 460 (typical).
  • Low VCE(sat), < 0.5 V.
  • ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V.
  • Available in 8 mm, 7.
  • inch/3000 Unit Tape and Reel.
  • NSV Prefix for Automotive and Other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC5658M3T5G_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SC5658RM3T5G
Manufacturer onsemi
File Size 93.77 KB
Description NPN Silicon General Purpose Amplifier Transistor
Datasheet download datasheet 2SC5658RM3T5G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces Board Space • High hFE, 210 −460 (typical) • Low VCE(sat), < 0.