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Ordering number : ENA2167
ATP401
N-Channel Power MOSFET
60V, 100A, 3.7mΩ, ATPAK
http://onsemi.com
Features
• ON-resistance RDS(on)1=2.8mΩ(typ) • 4.5V Drive
• Input Capasitance Ciss=17000pF(typ) • Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
*1 VDD=36V, L=100μH, IAV=70A(Fig.1) *2 L≤100μH, Single pulse
EAS IAV
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings 60
±20 100 400
90 150 --55 to +150 549
70
Unit V V A A W °C °C mJ A
Stresses exceeding Maximum Ratings may damage the device.
ATP401 Datasheet
