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Ordering number : ENA1405A
ATP404
N-Channel Power MOSFET
60V, 95A, 7.2mΩ, ATPAK
http://onsemi.com
Features
• ON-resistance RDS(on)1=5.5mΩ (typ.) • 4.5V drive
• Input capacitance Ciss=6400pF (typ.) • Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=30V, L=100μH, IAV=48A *2 L≤100μH, Single pulse
EAS IAV
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings 60
±20 95
380 70
150 --55 to +150
214 48
Unit V V A A W °C °C mJ A
Stresses exceeding Maximum Ratings may damage the device.