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ATP404 - N-Channel Power MOSFET

Features

  • ON-resistance RDS(on)1=5.5mΩ (typ. ).
  • 4.5V drive.
  • Input capacitance Ciss=6400pF (typ. ).
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2 Note :.
  • 1 VDD=30V, L=10.

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Datasheet Details

Part number ATP404
Manufacturer onsemi
File Size 259.36 KB
Description N-Channel Power MOSFET
Datasheet download datasheet ATP404 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1405A ATP404 N-Channel Power MOSFET 60V, 95A, 7.2mΩ, ATPAK http://onsemi.com Features • ON-resistance RDS(on)1=5.5mΩ (typ.) • 4.5V drive • Input capacitance Ciss=6400pF (typ.) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=30V, L=100μH, IAV=48A *2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 95 380 70 150 --55 to +150 214 48 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
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