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ATP602 - N-Channel Power MOSFET

Features

  • ON-resistance RDS(on)=2.1Ω (typ. ).
  • 10V drive.
  • Input capacitance Ciss=350pF (typ. ).
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.
  • 2 IAV Note :.
  • 1 VDD=9.

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Datasheet Details

Part number ATP602
Manufacturer onsemi
File Size 255.68 KB
Description N-Channel Power MOSFET
Datasheet download datasheet ATP602 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1543A ATP602 N-Channel Power MOSFET 600V, 5A, 2.7Ω, ATPAK http://onsemi.com Features • ON-resistance RDS(on)=2.1Ω (typ.) • 10V drive • Input capacitance Ciss=350pF (typ.) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=99V, L=5mH, IAV=5A (Fig.1) *2 L≤5mH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 600 ±30 5 15 70 150 --55 to +150 74 5 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
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