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ATP613 - N-Channel Power MOSFET

Features

  • Reverse recovery time trr=60ns(typ. ).
  • Input Capacitance Ciss=350pF(typ. ).
  • Halogen free compliance.
  • ON-resistance RDS(on)=1.55Ω(typ. ).
  • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Source-to-Drain Diode Forward Current (DC) Source-to-Drain Diode Forward Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS I.

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Datasheet Details

Part number ATP613
Manufacturer onsemi
File Size 276.15 KB
Description N-Channel Power MOSFET
Datasheet download datasheet ATP613 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1903A ATP613 N-Channel Power MOSFET 500V, 5.5A, 2Ω, ATPAK http://onsemi.com Features • Reverse recovery time trr=60ns(typ.) • Input Capacitance Ciss=350pF(typ.) • Halogen free compliance • ON-resistance RDS(on)=1.55Ω(typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Source-to-Drain Diode Forward Current (DC) Source-to-Drain Diode Forward Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP IS ISP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=99V, L=5mH, IAV=5.5A (Fig.
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