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FDD86567-F085 - N-Channel Power MOSFET

Datasheet Summary

Features

  • Typical RDS(on) = 2.6 mΩ at VGS = 10V, ID = 80 A.
  • Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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Datasheet preview – FDD86567-F085

Datasheet Details

Part number FDD86567-F085
Manufacturer ON Semiconductor
File Size 465.72 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FDD86567-F085 Datasheet
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Full PDF Text Transcription

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FDD86567-F085 N-Channel PowerTrench® MOSFET FDD86567-F085 N-Channel PowerTrench® MOSFET 60 V, 100 A, 3.2 mΩ Features „ Typical RDS(on) = 2.6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems D D G G S DTO-P-2A5K2 (TO-252) S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
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