FDMC6696P - P-Channel Power MOSFET

onsemi

General Description

This P

POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness.

Key Features

Max RDS(on) = 4.9 mW at VGS =.
4.5 V, ID =.
18 A.
Max RDS(on) = 16.4 mW at VGS =.
1.8 V, ID =.
9 A.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant.

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FDMC6696P p-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC6696P
Manufacturer	onsemi
File Size	390.98 KB
Description	P-Channel Power MOSFET
Datasheet	FDMC6696P Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – P-Channel, POWERTRENCH) -20 V, -75 A, 4.9 mW FDMC6696P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness. Features • Max RDS(on) = 4.9 mW at VGS = −4.5 V, ID = −18 A • Max RDS(on) = 16.4 mW at VGS = −1.