FDMC6696P Description
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness.
FDMC6696P Key Features
- Max RDS(on) = 4.9 mW at VGS = -4.5 V, ID = -18 A
- Max RDS(on) = 16.4 mW at VGS = -1.8 V, ID = -9 A
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability in a Widely Used
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS