Description
This P
Channel Logic Level MOSFET is produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored to minimize the on
state resistance and yet maintain low gate charge for superior switching performance.
Features
- 2 A,.
- 30 V.
- RDS(ON) = 80 mW @ VGS =.
- 10 V.
- RDS(ON) = 125 mW @ VGS =.
- 4.5 V.
- Low Gate Charge (6.2 nC Typical).
- High Performance Trench Technology for Extremely Low RDS(ON).
- High Power Version of Industry Standard SOT.
- 23 Package. Identical
Pin.
- Out to SOT.
- 23 with 30% Higher Power Handling Capability.
- These Devices are Pb.
- Free and are RoHS Compliant
SOT.
- 23 CASE 52.
FDN360P Datasheet
