FDN360P Overview
This P−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.
FDN360P Key Features
- 2 A, -30 V
- RDS(ON) = 80 mW @ VGS = -10 V
- RDS(ON) = 125 mW @ VGS = -4.5 V
- Low Gate Charge (6.2 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power Version of Industry Standard SOT-23 Package. Identical
- These Devices are Pb-Free and are RoHS pliant
