FDN5632N-F085
FDN5632N-F085 is N-Channel Logic Level PowerTrench MOSFET manufactured by onsemi.
Features
- RDS(on) = 98 m W at VGS = 4.5 V, ID = 1.6 A
- RDS(on) = 82 m W at VGS = 10 V, ID = 1.7 A
- Typ Qg(TOT) = 9.2 n C at VGS = 10 V
- Low Miller Charge
- UIS Capability
- AEC- Q101 Qualified and PPAP Capable
- This Device is Pb- Free, Halide Free and is Ro HS pliant
Applications
- DC/DC Converter
- Motor Drives
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS VGS ID
Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10 V) Pulsed
±20
EAS Single Pulse Avalanche Energy (Note 1) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Rq JC Thermal Resistance Junction to Case Rq JA Thermal Resistance Junction to Ambient
TO- 252, 1 in2 Copper Pad Area
74 m J
- 55 to +150 °C
°C/W
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 74 m J is 100% test at L = 80 m H, IAS = 1.4 A, starting TJ = 25°C
DATA SHEET .onsemi.
VDDS 60 V r DS(on) MAX 82 m W @ 10 V 98 m W @ 4.5 V
ID MAX 1.6 A
SOT- 23/SUPERSOTt- 23, 3 LEAD, 1.4x2.9 CASE 527AG
MARKING DIAGRAM 5632M
5632 = Specific Device Code M = Date Code
PIN ASSIGNMENT D
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