Datasheet Details
| Part number | FDN028N20 |
|---|---|
| Manufacturer | onsemi |
| File Size | 337.79 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDN028N20 Datasheet
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General Description
This N
Channel POWERTRENCH MOSFET is produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on
state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A.
- Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A.
- High Performance Trench Technology for Extremely Low rDS(on).
- High Power and Current Handling Capability in a Widely Used Surface Mount Package.
- Fast Switching Speed.
- 100% UIL Tested.
- This Device is Pb.
- Free, Halide Free and is RoHS Compliant.