FQPF3N50C - 500V N-Channel MOSFET

onsemi

Download the FQPF3N50C datasheet PDF. This datasheet also covers the FQP3N50C variant, as both devices belong to the same 500v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.

Key Features

3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V.
Low gate charge ( typical 10 nC ).
Low Crss ( typical 8.5 pF).
Fast switching.
100 % avalanche tested.
Improved dv/dt capability.

📥 Download Datasheet

FQPF3N50C 500v n-channel mosfet by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (FQP3N50C-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	FQPF3N50C
Manufacturer	onsemi
File Size	0.97 MB
Description	500V N-Channel MOSFET
Datasheet	FQPF3N50C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FQP3N50C/FQPF3N50C 500V N-Channel MOSFET QFET® FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features • 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V • Low gate charge ( typical 10 nC ) • Low Crss ( typical 8.5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.