MCH6320 - Power MOSFET

onsemi

Key Features

1.8V Drive.
High Speed Switching.
Pb-Free and RoHS Compliance VDSS.
12V RDS(on) Max 70mΩ@.
4.5V 115mΩ@.
2.5V 215mΩ@.
1.8V ID Max.
3.5A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS.
12 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID.
3.5 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP.
14 A Power Dissipation W.

MCH6320 power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	MCH6320
Manufacturer	onsemi
File Size	360.19 KB
Description	Power MOSFET
Datasheet	MCH6320 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MCH6302	Ultrahigh-Speed Switching Applications	Sanyo
MCH6303	Ultrahigh-Speed Switching Applications	Sanyo
MCH6305	Ultrahigh-Speed Switching Applications	Sanyo
MCH6306	P-Channel Silicon MOSFET	Sanyo
MCH6307	Ultrahigh-Speed Switching Applications	Sanyo

Other Datasheets by onsemi

Part Number	Description
MCH6321	P-Channel Power MOSFET
MCH6331	Power MOSFET
MCH6336	P-Channel Power MOSFET
MCH6337	P-Channel Power MOSFET
MCH6341	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MCH6320 Power MOSFET –12V, 70mΩ, –3.5A, Single P-Channel www.onsemi.com Features • 1.8V Drive • High Speed Switching • Pb-Free and RoHS Compliance VDSS −12V RDS(on) Max 70mΩ@ −4.5V 115mΩ@ −2.5V 215mΩ@ −1.8V ID Max −3.5A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS −12 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID −3.5 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP −14 A Power Dissipation When mounted on ceramic substrate (1200mm2 × 0.8mm) Junction Temperature PD Tj 1.5 W 150 °C Storage Temperature Tstg −55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling.