MCH6336 - P-Channel Power MOSFET

onsemi

Key Features

http://onsemi. com Ultrahigh-speed switching Halogen free compliance.
1.8V drive Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Conditions Ratings -12 ±10 --5.

MCH6336 p-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	MCH6336
Manufacturer	onsemi
File Size	566.78 KB
Description	P-Channel Power MOSFET
Datasheet	MCH6336 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0958A MCH6336 P-Channel Power MOSFET –12V, –5A, 43mΩ, Single MCPH6 Features • • http://onsemi.com Ultrahigh-speed switching Halogen free compliance • • 1.8V drive Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Conditions Ratings -12 ±10 --5 -20 1.5 150 -55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t Conditions is not implied.