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MCH6321 - P-Channel Power MOSFET

Key Features

  • 1.8V drive.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings --20 ±10 --4 --16 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those liste.

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Datasheet Details

Part number MCH6321
Manufacturer onsemi
File Size 531.17 KB
Description P-Channel Power MOSFET
Datasheet download datasheet MCH6321 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0963B MCH6321 P-Channel Power MOSFET –20V, –4A, 83mΩ, Single MCPH6 http://onsemi.com Features • 1.8V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings --20 ±10 --4 --16 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2.1 0.07 0.