• Part: MMVL2105T1
  • Description: Silicon Tuning Diode
  • Category: Diode
  • Manufacturer: onsemi
  • Size: 75.40 KB
Download MMVL2105T1 Datasheet PDF
onsemi
MMVL2105T1
MMVL2105T1 is Silicon Tuning Diode manufactured by onsemi.
Features http://onsemi. - - - - - High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance - 10% plete Typical Design Curves Pb- Free Package is Available 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE 1 CATHODE 2 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 30 200 Unit Vdc m Adc 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction- to- Ambient Junction and Storage Temperature Symbol PD 200 1.57 Rq JA TJ, Tstg 635 150 m W m W/°C °C/W °C Max Unit PLASTIC SOD- 323 CASE 477 STYLE 1 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR- 5 Minimum Pad 4U M G G 4U = Device Code M = Date Code- G = Pb- Free Package (Note: Microdot may be in either location) - Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMVL2105T1 MMVL2105T1G Package Shipping † SOD- 323 3000 / Tape & Reel SOD- 323 3000 / Tape & Reel (Pb- Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are remended choices for future use and best overall value. © Semiconductor ponents Industries, LLC, 2006 February, 2006 - Rev. 1 Publication Order Number: MMVL2105T1/D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 m Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz...