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NTMS4816N
MOSFET – Power, N-Channel, SO-8
30 V, 11 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant
Applications
• Disk Drives • DC−DC Converters • Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20 V
Continuous Drain
Steady TA = 25°C
ID
Current RqJA (Note 1)
State
TA = 70°C
9.0
A
7.2
Power Dissipation RqJA Steady TA = 25°C
PD
1.37 W
(Note 1)
State
Continuous Drain
Steady TA = 25°C
ID
Current RqJA (Note 2)
State
TA = 70°C
6.8
A
5.4
Power Dissipation RqJA (Note 2)
TA = 25°C
PD
0.
NTMS4816N Datasheet
