NTMSD2P102LR2 Description
NTMSD2P102LR2 FETKY™ Power MOSFET and Schottky Diode Dual SO−8 Package High Efficiency ponents in a Single SO−8 Package High Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF Logic Level Gate Drive Independent Pin−Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use Less ponent Placement for Board Space Savings SO−8 Surface Mount Package, Mounting Information for SO−8 Package...
NTMSD2P102LR2 Key Features
- Power Management in Portable and Battery-Powered Products, i.e
- Continuous Thermal Resistance
- Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain C
- Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain C
- Junction-to-Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain C