NTMSD6N303
NTMSD6N303 is Power MOSFET manufactured by onsemi.
Features
- These Devices are Pb- Free and are Ro HS pliant
- NVMSD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
Applications
- Buck Converter
- Buck- Boost
- Synchronous Rectification
- Low Voltage Motor Control
- Battery Packs
- Chargers
- Cell Phones
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
Drain- to- Source Voltage
Drain- to- Gate Voltage (RGS = 1.0 MW) Gate- to- Source Voltage
- Continuous
Drain Current
- (Note 2)
- Continuous @ TA = 25°C
- Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C (Note 2)
VDSS VDGR VGS
ID IDM PD
30 30 "20
6.0 30 2.0
Vdc Vdc Vdc
Adc Apk Watts
Single Pulse Drain- to- Source Avalanche
Energy
- Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc,
VDS = 20 Vdc, IL = 9.0 Apk,
L = 10 m H, RG = 25 W)
325 m J
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. 2. Mounted on 2″ square FR4 board
(1 in sq, 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
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