NTMSD3P303R2 Datasheet | onsemi

Features - High Efficiency ponents in a Single SO- 8 Package - High Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF - Independent Pin- Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use - Less ponent Placement for Board Space Savings - SO- 8 Surface Mount Package, Mounting Information for SO- 8 Package Provided - Pb- Free Package is Available Applications - DC- DC Converters - Low Voltage Motor Control - Power Management in Portable and Battery- Powered Products, i.e.: puters, Printers, PCMCIA Cards, Cellular and Cordless Telephones MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain- to- Source Voltage Gate- to- Source Voltage - Continuous Thermal Resistance - Junction- to- Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C PCuolnsteindu Dourasin Dr Cauinrr Cenutrr(e Nnot t@e 4T)A = 70°C Thermal Resistance - Junction- to- Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Thermal Resistance - Junction- to- Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = - 30 Vdc, VGS = - 4.5 Vdc, Peak IL = - 7.5 Apk, L = 5 m H, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds VDSS VGS RPq DJA ID ID IDM RPq DJA ID IDIDM RPq DJA ID ID IDM TJ, Tstg EAS - 30 "20 171 0.73 - 2.34 - 1.87 - 8.0 °C/W W A A A 100 1.25 - 3.05 - 2.44 - 12 °C/W W A A...