NVB6410AN Datasheet | onsemi

MOSFET - Power, N-Channel 100 V, 76 A, 13 m W NTB6410AN, NTP6410AN, NVB6410AN Features - Low RDS(on) - High Current Capability - 100% Avalanche Tested - NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25C Unless otherwise specified) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage - Continuous $20 Continuous Drain Steady TC = 25C Current Rq JC State TC = 100C Power Dissipation Steady TC = 25C Rq JC State Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature TJ,...