NVB6411AN Datasheet | onsemi

NTB6411AN, NTP6411AN, NVB6411AN N-Channel Power MOSFET 100 V, 77 A, 14 m W Features - Low RDS(on) - High Current Capability - 100% Avalanche Tested - NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Drain- to- Source Voltage Gate- to- Source Voltage - Continuous Continuous Drain Current Rq JC Steady State TC = 25°C TC = 100°C Power Dissipation Rq JC Steady TC = 25°C State Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Range VDSS VGS ID IDM TJ, Tstg 100 $20 77 54 217 - 55 to +175 Source Current (Body Diode) Single Pulse Drain- to- Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 56 A, L = 0.3 m H, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds IS EAS 77...