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NTB6411AN, NTP6411AN, NVB6411AN
N-Channel Power MOSFET
100 V, 77 A, 14 mW
Features
• Low RDS(on) • High Current Capability • 100% Avalanche Tested • NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain Current RqJC
Steady State
TC = 25°C TC = 100°C
Power Dissipation RqJC
Steady TC = 25°C State
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature Range
VDSS VGS ID
PD
IDM TJ, Tstg
100 $20 77 54 217
285 −55 to +175
Source Current (Body Diode) Single Pulse Drain−to−So
NVB6411AN Datasheet
