NVB6413AN Datasheet | onsemi

MOSFET - Power, N-Channel 100 V, 42 A, 28 m W NTB6413AN, NTP6413AN, NVB6413AN Features - Low RDS(on) - High Current Capability - 100% Avalanche Tested - NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25C Unless otherwise specified) Symbol Parameter Value Unit VDSS Drain- to- Source Voltage VGS Gate- to- Source Voltage - Continuous $20 Continuous Drain Steady TC = 25C Current Rq JC State TC = 100C PD Power Dissipation Steady TC = 25C Rq JC State IDM Pulsed Drain Current tp = 10 ms TJ, Tstg Operating Junction and Storage...