NVB6412AN
NVB6412AN is N-Channel Power MOSFET manufactured by onsemi.
NTB6412AN, NTP6412AN, NVB6412AN
N-Channel Power MOSFET 100 V, 58 A, 18.2 m W
Features
- Low RDS(on)
- High Current Capability
- 100% Avalanche Tested
- NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain- to- Source Voltage
Gate- to- Source Voltage
- Continuous
Continuous Drain Current Rq JC
Power Dissipation Rq JC
Steady State
Steady State
TC = 25°C TC = 100°C TC = 25°C
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature Range
VDSS VGS ID
IDM TJ, Tstg
100 $20
58 41 167
- 55 to +175
Source Current (Body Diode)
Single Pulse Drain- to- Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 44.7 A, L = 0.3 m H, RG = 25 W)
Lead Temperature for Soldering Purposes, 1/8″ from Case for 10...
