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NVD4804N - N-Channel Power MOSFET

Key Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • AEC Q101 Qualified.
  • NVD4804N.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number NVD4804N
Manufacturer onsemi
File Size 356.85 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NVD4804N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTD4804N, NVD4804N MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 117 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain Current (RqJC) (Note 1) Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°