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NTD4809N, NVD4809N
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4809N • These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery • DC−DC Converters • Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (RqJA) (Note 1)
Power Dissipation (RqJA) (Note 1)
Continuous Drain Current (RqJA) (Note 2)
Power Dissipation (RqJA) (Note 2)
Continuous Drain Current (RqJC) (Note 1)
Steady State
TA = 25°C TA = 85°C TA = 25°C
TA = 25°C TA = 85°C TA = 25°C
TC = 25°C TC = 85°C
NVD4809N Datasheet
